Abstract
Diamond-like carbon (DLC) films were deposited by a plasma source ion implantation (PSII) on nylon, UHMWPE, PTFE and silicon wafer substrates. H 2O, O 2 and CH 4 plasma were used as pretreatments for the substrate to investigate adhesion. C 2H 2 gas was used as working gas for the deposition of DLC films. Negative pulse voltage of − 10 kV was used to produce glow discharge plasma and implantation. The results showed that the implantation of carbon ions and DLC film deposition on the insulating materials were performed. Surface of the films was very smooth and none of the special structure was observed. The pretreatments of H 2O and O 2 PSII were effective to improve the adhesion of DLC films for PTFE substrate. The friction coefficients were 0.2 after 2000 rotations.
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