Abstract
Silicon dioxide thin films have been deposited successfully on high speed steel (HSS) cutting tool substrates by means of microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF reactive magnetron sputtering of a pure silica target in an oxygen and argon mixture. The films are characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). Chemical composition of the thin films on HSS cutting tools have been investigated as a function of the gas volume ratio [O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ]/[Ar], RF power and substrate bias. A comparative study of the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin films deposited at -20V DC bias and -80V RF bias is presented. An improvement of the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin film properties due to increased energetic substrate bombardment has been found. It is concluded that SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin films deposited on HSS cutting tools by this method are compact and dense, and have good stoichiometry and electrical insulation properties.
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