Abstract
A thin film of Cu2ZnSnS4, a potential compound semiconductor for the absorber layer in thin film heterojunction solar cells, has been successfully deposited using the spray pyrolysis process. The influence of solution spray rate on deposited film characteristics is investigated. The structural and optical properties of the films have been studied. X-ray diffraction studies revealed the films are polycrystalline in nature with the kesterite structure and the lattice parameters are found to be a = b = 0.542 nm and c = 1.082 nm. Micro Raman spectra confirm the Cu2ZnSnS4 crystal phase. Optical band gap, evaluated from spectral transmittance data, which is close to 1.5 eV. The absorption coefficient of these films is ≥ 104 cm−1. These films are found to be p-type in nature. Finally, work on fabricating a conventional thin film heterojunction solar cell has been undertaken.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
