Abstract
Copper oxide films were deposited on silicon substrates by direct current magnetron sputtering of Cu in a mixture of O2 and Ar gases. Oxidation of the target as a result of adsorption or ion-plating of the reactive gases directly affects the discharge current and composition of the deposited films. We propose a kinetic model that relates the target oxidation to the discharge current, showing a one-to-one relationship between the discharge current characteristics and composition of the deposited films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
