Abstract
Trifluoroacetate metalorganic deposition (TFA-MOD) process is expected as a low cost process for mass production of coated conductors because it is a non-vacuum process. In order to apply the technique to fabrication of coated conductors, suitable buffer layers have to be considered to achieve a high orientation of superconducting layer and prevention of the reaction with metal substrate. The combination of CeO 2 on IBAD-YSZ is considered as an effective buffer for TFA-MOD process expecting to satisfy a high acid resistivity and high crystal grain alignment. The CeO 2 buffer layer was deposited on IBAD-YSZ/Hastelloy substrates by RF magnetron sputtering. From XRD analysis, the CeO 2 buffer layer showed very good in-plane alignment on YSZ-IBAD buffer layer. In a holding time of 1 h, the suitable maximum heat treatment temperature was found to be from 750°C to 775°C for TFA-Y123 on metal substrate. The J c– B property of Y123 on CeO 2/YSZ/Hastelloy shows the J c values of 1.4 MA/cm 2 at 77.3 K, 0 T and more than 10 5 A/cm 2 at 77.3 K, 2 T. The high performance under high magnetic field was confirmed.
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