Abstract
Amorphous zinc oxide thin film was prepared through Sol-Gel method using deep-ultraviolet photochemical activation instead of high temperature annealing. The XRD patterns showed that the zinc oxide film was amorphous. XPS analysis showed that the film was mainly composed of Zn O. The Al top electrodes were deposited on irradiated thin film by DC magnetron sputtering to get Al/a-Zn O/FTO structured device. The influence of deep-ultraviolet irradiation time on switching properties was investigated to understand the mechanism of deep-ultraviolet irradiation. The results illustrate that the device after sufficient irradiation(12 h) has bipolar resistive switching property. The distribution of threshold voltage is very concentrated(–3.7 VVset–2.9 V, 3.4 VVreset4.3 V) which meets the need of low voltage operation of the memories. Both HRS and LRS have not obviously attenuated for at least 4000 s. The resistive switching behavior of the Al/a-Zn O/FTO device can be explained by the trap-charged space-charge-limited current mechanism.
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