Abstract
Ag(In,Ga)Se2 (AIGS) films with a uniform Ag depth profile were successfully deposited by a modified three-stage method in which a Ag–Se layer was pre deposited at a low temperature (350 °C) before a high-temperature process at around 600 °C. The Ag–Se layer acted as a cap layer and effectively prevented the desorption of In from the films during the high-temperature process. The In/(In+Ga) ratio of the AIGS films was found to be about 0.15. The best AIGS solar cell deposited by this method showed an active area conversion efficiency of 10.7%.
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