Abstract
This work deals with the deposition of thin films using an atmospheric pressure direct current nitrogen plasma jet with tetramethyldisiloxane as precursor. The effect of O2 flow and plasma discharge power on film deposition rate and film chemical characteristics is investigated in detail by surface profilometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. It is found that a higher deposition rate is obtained at higher oxygen flow rates and higher discharge powers. Increasing discharge power shows a certain amount of capability to transfer low oxygen content bonds to high oxygen content bonds. Organic films can be deposited in a pure nitrogen atmosphere. The film chemical composition can be tuned to a more inorganic structure by admixture of O2 leading to an increase in SiO4 units at high oxygen flow rates.
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