Abstract
The deposition rates for hydrogenated amorphous silicon, hydrogenated amorphous germanium and hydrogenated amorphous SiGe alloys, prepared by the plasma chemical vapour deposition method, are presented as functions of the substrate temperature. On the basis of the experimental results the behaviour of hydrogen on the growing surface is discussed quantitatively using a simplified model. The selection of long-lifetime radicals (such as SiH 3 and GeH 3) and the hydrogen-coverage factor are stressed as two key factors for controlling not only the deposition process but also the structural and electronic properties of the resultant alloy films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
