Abstract
Given the exceptional characteristics of diamond films, they have become increasingly popular in the fields of medicine, microelectronics, and detector electronics. However, despite all the advantages, there are many technological problems that complicate their widespread application and impose limitations on diamond use in technological processes. In this study, we proposed a new technique for obtaining a complex topology of polycrystalline diamond coatings by selective seeding of the substrate by nucleation centers and subsequent surface treatment with reactive ion etching to reduce the number of parasitic particles. As a result, diamond films were obtained with a high particle concentration in the film region and high repeatability of the pattern. Moreover, parasitic particles influenced neutralization in areas where film coverage was not needed. The effect of the diamond nanoparticle concentration in a photoresist and the effect of reactive ion etching on the formation of a continuous film and the removal of parasitic nucleation centers were examined. The relative simplicity, low power consumption, and high efficiency of this method make it attractive for both industrial and scientific applications.
Highlights
It is well known that diamond coatings are materials with a high potential for future applications
We propose a new technique for obtaining a topology of polycrystalline diamond coatings using the technology of substrate selective seeding by the nucleation centers and subsequent surface treatment with reactive ion etching to reduce the number of parasitic particles
An increase in the concentration of diamond nanoparticles in the volume of the photoresist led durations of ion etching of the photoresist and various initial concentrations of diamond nanoparticles to a higher relative area of the film coating
Summary
It is well known that diamond coatings are materials with a high potential for future applications. These materials have become increasingly popular because of their wide range of unique characteristics [1,2,3]. Despite these advantages, there are many technological problems that complicate the widespread use of diamond coatings and impose a restriction on their use in technological processes (such as obtaining the necessary topology and dimensions for manufacture of the matrix radiation detectors and diamond RF (radio-frequency) electronics) [4,5]. The problem of diamond coating deposition over a large area can be effectively solved by using homo- and hetero-substrates such as silicon [1]
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