Abstract
Molecular dynamics simulations were performed to investigate SiF2 continuously bombarding the amorphous silicon surface with energies of 10, 50 and 100 eV at normal incidence at 300 K. With increasing incident energy, the deposition rate and etch rate increases. In the deposited amorphous films, SiF species is dominant. With increasing incident energy, the fraction of SiF2 decreases, while the fraction of SiF3 in the film increases.
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