Abstract
Undoped and Bi/Sb doped highly transparent ZnO films were grown adopting metal organic chemical vapor deposition with suitable combinations of Zn(C5F6HO2)2·2H2O·(CH3OCH2CH2)2O, Bi(C6H5)3, and Sb(C6H5)3 precursors. Hexagonal ZnO phases were always found. Doping levels ranged from 1.4 to 7.4 and from 0.2 to1.8 atomic % for Bi and Sb, respectively. UV−vis measurements indicated that the film transmittance was usually as high as 90% in the visible and near-infrared region. Dopant surface segregation was found in X-ray photoelectron spectroscopy experiments. Preliminary resistivity measurements indicated that lightly doped ZnO films are semiconducting while greater doping levels could result in potential varistor properties.
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