Abstract
We introduce the structure and operational principles of an electron cyclotron resonance microwave enhanced plasma source ion implantation/deposition system for the creation of diamond-like carbon (DLC) film. Using an unbalanced magnetron sputtering process, DLC film was deposited on the silicon substrate using high-purity graphite as the carbon source and argon as the sputtering gas. We used Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy characterization methods to study the structure and chemical ratio of the film under different deposition parameters. The results show that the optimal substrate bias and target-substrate distance are 50 V and 150 mm, respectively; when the deposition bias is increased, the film can be made denser and smoother. We also discuss the formation mechanism of DLC film based on the results of structural characterization.
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