Deposition and characterization of CrN thin films by reactive ion beam sputtering

Abstract

In this present work the characteristics of Chromium nitride (CrN) thin films on Silicon substrate were investigated as function of Nitrogen gas flow rate. Chromium nitride (CrN) thin films were fabricated on single crystal silicon substrates by using the reactive ion beam sputtering at room temperature. Effect of N2 gas flow on microstructure, surface roughness and density were investigated by GIXRR and GIXRD by depositing [CrN]x4 films at various N2 gas flow from 1sccm to 4sccm while keeping the Ar flow constant at 2.5 sccm. The effects of N2 gas flows on the deposition rate showed that the deposition rate decreases with the increase of nitrogen gas flow. X-ray study shows that the surface roughness and density of the CrN films increases with the increase of N2 gas flows. It is suggested that the ion and particles bombardment at low gas pressures cause a smoother surface.