Deposition and characterization of carbon nitride films from hexamethylenetetramine/N 2 by microwave plasma-enhanced chemical vapor deposition

Abstract

Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N 2 gas was used as both nitrogen source and carrier gas. The sp 3-bonded CN structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline α- and β-C 3N 4 as well as graphitic-C 3N 4 and β-Si 3N 4 which were not easily distinguished. Raman spectroscopy also suggested the existence of α- and β-C 3N 4 in the films. X-ray photoelectron spectroscopy study indicated the presence of sp 2- and sp 3-bonded CN structures in the films while sp 3CN bonding structure predominated to the sp 2 CN bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CN x :Si, where x depends on the film depth, with some evidences of crystalline C 3N 4 formation.