Abstract
Nano porous silicon was achieved by electrochemical etching technique of current density 20 mA/cm 2 , 25% HF and etching time 15min. Carbon Nano layers have been deposited on PSi substrate by PECVD. XRD spectrum show that porous silicon has crystalline phase and becomes very broad after etching time, in addition, XRD spectrum for carbon layers show several peaks between (2θ=28.25-28.75) which belong to carbon nanotube and these peaks intensity increases with increasing of carbon thickness. Raman spectrum illustrates that peak position was at 516.32nm for porous silicon prepared at etching time 15 min.
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