Abstract
Magnetotransport and the electron channel parameters are investigated in p-GaInAsSb/p-InAs heterojunctions as functions of the acceptor doping level of the quaternary (GaInAsSb) layer. An abrupt decrease in the carrier mobility with increased doping level in these heterojunctions is observed. This decrease can be attributed to the narrowing and depletion of the channel near the interface and strong localization of electrons in potential wells at the interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.