Abstract
We consider the dependence of the capacitance C of the semiconductor depletion layer versus the contact bias V. When the concentration of doping impurities varies in the plane parallel to the contact, we show that the standard Schottky dependence C−2(V) is no longer a straight line. We compute the effective concentration Neff from the slope of the dependence C−2(V) by using the perturbation and variation methods and compare Neff with previous theoretical and experimental data.
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