Abstract

Oxygen vacancies generally create midgap states in transition metal oxides, which are expected to decrease the photoelectrochemical water-splitting efficiency. Recent experiments defy this expectation but leave the mechanism unclear. Focusing on the photoanode WO3 as a prototypical system, we demonstrate using nonadiabatic molecular dynamics that an oxygen vacancy suppresses nonradiative electron-hole recombination, because the defect acts as an electron reservoir instead of a recombination center. The occupied midgap electrons prefer to be populated a priori compared to the band edge transition because of a larger transition dipole moment, converting to depleted/unoccupied trap states that rapidly accept conduction band electrons and then cause trap-assisted recombination by impeding the bandgap recombination regardless of oxygen vacancy configurations. The reported results provide a fundamental understanding of the "realistic" role of the oxygen vacancies and their influence on charge-phonon dynamics and carrier lifetime. The study generates valuable insights into the design of high-performance transition metal oxide photocatalysts.

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