Abstract
AbstractDephasing dynamics of excitons in a GaN film grown on a ‐plane sapphire were studied by using the spectrallyresolved four‐wave‐mixing (SR‐FWM) spectroscopy. Due to the anisotropic exchange interaction originates from the anisotropic strain field of the substrate, the degenerate exciton states with the total angular moment ± 1 mix and split into their fine structures.Since each component of the exciton fine structure (EFS) is highly polarized, the polarization‐dependent SR‐FWM spectra successfully resolve the dephasing dynamics in the individual EFS resonances. The result of each EFS shows a significantly different dephasing time, suggesting that the anisotropic dephasing contribution occurs in each EFS. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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