Abstract
We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 1018 m−2) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.
Highlights
Fluctuations are most prominent when the sample dimensions are of the order of the phase coherence length lφ of the sample
This was contradicted by later theoretical work of Aleiner and Blanter who showed that the time scales for weak localization (WL) and universal conductance fluctuations (UCF) are exactly identical for dephasing by electron-electron scattering[26]
We show that the phase breaking time relevant for WL and UCF are identical for the Si:P and Ge:P δ-layers at low temperatures (0.3–4.2 K) where the dephasing is due to electron-electron scattering as confirmed by the temperature dependence of τφWL
Summary
Fluctuations are most prominent when the sample dimensions are of the order of the phase coherence length lφ of the sample. We show that the phase breaking time relevant for WL and UCF are identical (i.e. τφWL =τφUCF) for the Si:P and Ge:P δ-layers at low temperatures (0.3–4.2 K) where the dephasing is due to electron-electron scattering as confirmed by the temperature dependence of τφWL.
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