Abstract
We study dephasing in semiconductor–superconductor structures caused by coupling to a voltage probe. We consider structures where the semiconductor consists of two scattering regions between which partial dephasing is possible. As a particular example we consider a situation with a double barrier junction in the normal region. For a single-mode system we study the conductance both as a function of the position of the Fermi level and as a function of the barrier transparency. At resonance, where the double barrier is fully transparent, we study the suppression of the ideal factor-of-two enhancement of the conductance when a finite coupling to the voltage probe is taken into account.
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