Abstract
We investigated how the injected current and the irradiation light power for dressed-photon–phonon (DPP)-assisted annealing affected the performance of the fabricated device. It was shown that there exists a threshold injection current for DPP-assisted annealing. In the case of the devices we fabricated, the threshold current was about 400 mA: When the injected current was below the threshold, the electroluminescence emission intensity did not change even after DPP-assisted annealing. On the other hand, when the injected current was above the threshold, the emission intensity increased by two orders of magnitude. The role of irradiation light was also examined and it was found that the emission spectral profile varied depending on the intensity of the irradiation light power in DPP-assisted annealing. Furthermore, we confirmed that the emission intensity had a quadratic dependence on the driving current when the driving current was higher than 400 mA. This quadratic dependence was considered to be due to electron–electron scattering.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
