Dependence on the incident angle of the electronic energy loss of planarly channeled fast ions

Abstract

The angular dependence of the electronic energy loss of fast ions was calculated. Models for the transitions from axial to planar channeling and from planar channeling to a random direction are discussed in terms of a simple generalization of the Lindhard–Jin–Gibson Model for the axial–random transition. In order to compare these models with experimental data, the energy loss of 2.0 MeV He ions channeled through a thin silicon crystal into directions that scan the {0 0 1} plane from the [1 1 0] axis to the [1 0 0] axis was measured.