Abstract
The tunnel magnetoresistance (TMR) ratio in a magnetic tunnel junction (MTJ) with an L10-Mn62Ga38/Fe/MgO/CoFe structure was considerably improved by Fe layer insertion. A maximum TMR ratio of 24% was observed in an MTJ with a Fe thickness of 1.1 nm at room temperature, which corresponded to a 57% TMR ratio in the case of a complete antiparallel magnetization configuration. Fe layer thickness dependences of the magnetization curve and TMR effect were also investigated. It was revealed that the magnetization of Fe on 30-nm-thick MnGa could be fixed in a perpendicular direction when the thickness of the Fe was below 2.0 nm.
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