Dependence of transition width on current and critical current in transition-edge sensors

Abstract

In superconducting transition-edge sensor X-ray detectors, we observe that as the thermal conductance (G) to the heat bath increases, the resistive transition broadens. Consequently, the sensitivity of films to deposited energy worsens. Using a two-fluid model for the superconducting-to-normal transition in a thin film, we show that this broadening can be attributed to the larger current (I0) necessary for biasing the film at a given point in the transition for higher-G devices, resulting in a higher Ic0/I0 ratio (Ic0 is the film's critical current at zero temperature). To recover a sharper transition, we fabricated rectangular films with varying numbers of internal normal-metal structures while keeping G constant, allowing the independent variation of both I0 and Ic0. We show that it is possible to manipulate the transition width and G independently, thus enabling fast thermal sensors with an excellent energy resolution.