Abstract
Etching kinetics of swift heavy ions (SHI) tracks in olivine is investigated in frame of experimentally verified numerical approach. The model takes into account variation of induced chemical reactivity of the material around the whole ion trajectory with the nanometric accuracy. This enables a quantitative description of wet chemical etching of SHI tracks of different lengths and orientations towards to the sample surface. It is demonstrated that two different modes of etching, governed by diffusion of etchant molecules and by their reaction with the material must be observed in experiments using techniques with different resolution thresholds. Applicability limits of the optical microscopy for detection of heavy ion parameters by measuring of the lengthwise etching rates of the ion track are discussed.
Highlights
Etching kinetics of swift heavy ions (SHI) tracks in olivine is investigated in frame of experimentally verified numerical approach
Utilizing effects of chemical activation, methods based on wet chemical etching (WCE) of SHI tracks were developed for fabrication of membranes, microdiaphragms, conductive channels, polymer filters, nanostructures and nanowires[8], as well as for design of heavy particles detectors and analysis of results of their irradiations[12,13,14,15,16,17,18]
This leads to coexistence of two mechanisms of WCE of SHI tracks in (Mg0.11Fe0.89)2SiO421: (a) fast etching of the structure transformed track core controlled by diffusion of etchant molecules to the etching front, and (b) slow etching of the track periphery containing Fe+ cations controlled by reaction rates of these molecules
Summary
Etching kinetics of swift heavy ions (SHI) tracks in olivine is investigated in frame of experimentally verified numerical approach. This approach describes: (1) excitation and relaxation kinetics of the electronic and ionic subsystems of a target in an SHI track[26,27,28]; (2) changes of chemical states of a material stimulated by this kinetics[13] providing with the radial distributions of chemical reactivity around the SHI trajectories; and (3) a model of wet chemical etching of an SHI track taking into account diffusion-controlled WCE of the nanometric track core, reaction-controlled WCE at the larger distances from the ion trajectory, as well as gradual transition between these etching modes in the intermediate region.
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