Abstract
Time delays of electrical breakdown in a gas-filled diode (td) were measured as a function of the time between two successive measurements ( tau ) at cathode temperatures of 300K, 523K and 673K. The diode was filled with nitrogen at 4 mbar with an oxygen impurity of about 10 ppm. It is shown that the breakdown time delays at 673K are one order of magnitude smaller than those at 300K.
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