Abstract
The thermally induced metastability was observed in unhydrogenated doped amorphous silicon prepred by Low Pressure Chemical Vapour Deposition (LPCVD). The equilibration temperature (T*) was found to be 380°± 20°C. The preliminary study of the influence of hydrogen content on thermally induced metastability in amorphous silicon is reported. In the hydrogenated doped films the equilibration temperature changes from 380° ± 20°C to 170° ± 10°C, as H content increases to 12 at.%.
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