Dependence of the Spatial Resolution of a Matrix Photodetector Based on Indium Antimonide on the Thickness of the Photosensitive Layer

Abstract

The photoelectric interconnection of matrix photodetectors in the medium-wave IR range of 320 × 256 elements with a step of 30 μm and 640 × 512 elements with a step of 15 μm based on indium antimonide is investigated. The dependence of the crosstalk value on the thickness of a thinned InSb bulk structure was determined. The interrelation of the elements of matrix photodetectors based on epitaxial indium antimonide is significantly less than the interrelation based on bulk indium antimonide.