Abstract
The crystallography of a quadrangular contour confining dislocation etch pits in the plane of the surface of a film is investigated via the structural-sensitive etching of GeSi epitaxial films on Si(001) in combination with atomic force microscopy. Depending on such characteristics of a film as its thickness and the presence of dislocation slip stripes, the sides of the contour can be parallel to direction 〈110〉 or 〈010〉. Etch pits are confined by {111} and {110} low-index facets. According to the electrochemical hypothesis, their formation is associated with the stress distribution near the slip stripes.
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