Abstract
Though Schottky-barrier solar cells have been studied extensively previously, not much work has been done recently on these cells, because of the fact that conventional p-n junction silicon solar cells have much higher efficiency and have attracted the attention of most of the researchers. However, the Schottky-barrier solar cells have the advantage of simple and economical fabrication process. In this paper, the effect of back surface recombination velocity on the minority carrier distribution and the spectral response of a Schottky-barrier silicon solar cell have been investigated and, based on this study, a new design of the cell with a back surface field has been suggested, which is expected to give much improved performance.
Highlights
After the development of the first silicon p-n junction solar cell [1], tremendous amount of research and development work have been done to improve its efficiency
Many new designs of silicon solar cells were developed over the years
Schottky-barrier silicon solar cell is one such device, which has been investigated by various researchers
Summary
After the development of the first silicon p-n junction solar cell [1], tremendous amount of research and development work have been done to improve its efficiency. The effect of back surface recombination velocity on the minority carrier distribution and the spectral response of a Schottky-barrier solar cell (SBSC) have been studied and a new design for the SBSC structure has been suggested. This new structure, which takes its analogy from the back surface field n+pp+ silicon solar cells, yields much improved performance than the conventional SBSC
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
