Dependence of the optical properties on the ion implanted depth profiles in fused quartz after a sequential implantation with Si and Au ions

Abstract

Fused quartz discs were implanted at room temperature (RT) with 2 MeV Si ions, reimplanted with 10 MeV Au ions and then annealed in a reducing atmosphere at 900°C for 1 h (Si + Au samples). The same process was repeated, but first Au ions were implanted, followed by Si ions (Au + Si samples). RT optical absorption and photoluminescence (PL) studies were performed before and after annealing for the two kinds of reimplanted samples, as well as RBS measurements for determining the Au implanted distributions. A dependence of the optical properties on the ion implanted depth profiles was observed. Indeed, these two implantation sequences show different behaviors in the absorption and PL spectra. The implications and the possible mechanisms concerning this behavior will be discussed in this paper.