Abstract
Tin dioxide varistors doped with CoO, ZnO, Ta 2O 5 and Cr 2O 3 were prepared by the mixed oxide method. Temperature dependent impedance spectroscopy revealed two different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O 2 species at the grain boundary interface. We show that Cr 2O 3 improves the varistor properties, generating sites for the adsorption of O′ and O″ at the grain boundary region. The O′ and O″ defects are truly responsible for the barrier formation at the grain boundary interface.
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