Abstract
We have performed negative and positive bias temperature instability (NBTI and PBTI) measurements on devices having different gate oxide types and thicknesses. The devices used for the study include 130nm and 90 nm oxynitrided gate dielectric bulk Si technology and devices with pure SiO2 gate dielectric. NBTI and PBTI were studied for both p-channel and n-channel MOSFETs for each of the oxide types and thicknesses, this requires the measurements be made in both accumulation and inversion modes. Using “Pseudo DC” measurements at 120 oC on p-channel and n-channel devices, we have extracted at least three distinct components of BTI. We find evidence for the existence of positive charge injection for PMOS under PBTI and more puzzling results for NMOS under PBTI, where unexpected interface state creation was observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
