Abstract
The calculation methods of the modulation transfer function (MTF) infrared (IR) focal plane arrays (FPAs) on the base of photodiodes are presented. The obtained results are based on the preliminary calculations of the areal distribution of quantum efficiency by modeling the 3-D diffusion process of photogenerated charge carriers in the photosensitive layer of IR FPA by the Monte Carlo method. The analysis of MTF is carried out for 1-D test patterns and 2-D “chess-type” test patterns, taking into account the basic photoelectric and design parameters of photosensitive elements.
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