Dependence of the Metal-Insulator-Semiconductor Schottky Barrier Height on Insulator Composition.

Abstract

The effects of different high-κ tunnel oxides on the metal-insulator-semiconductor Schottky barrier height (ΦB) were systematically investigated. While these high-κ interlayers have been previously observed to affect ΦB, there has never been a clear consensus as to why this ΦB modulation occurs. Changes in ΦB were measured when adding 0.5 nm of seven different high-κ oxides to n-Si/Ni contacts with a thin native silicon oxide also present. Depending on the high-κ oxide composition and ΦB measurement technique, increases in ΦB up to 0.4 eV and decreases up to 0.2 eV with a high-κ introduction were measured. The results were compared to several different hypotheses regarding the effects of tunnel oxides on ΦB. The experimental data correlated most closely with the model of a dipole formed at the SiOx/high-κ interface due to the difference in the oxygen areal density between the two oxides. Knowledge of this relationship will aid in the design of Schottky and ohmic contacts by providing criteria to predict the effects of different oxide stacks on ΦB.