Abstract
The meniscus shape dependence on the pressure difference is determined on the basis of analytical and numerical studies in the case of single crystals grown on the ground by the dewetted Bridgman method for classical semiconductors grown in uncoated ampoules (i.e. Young wetting angles θc and growth angles αe satisfy the inequality αe+θc<180°). The pressure interval permitting to get dewetting and the corresponding meniscus shapes are calculated for InSb and GaSb crystals grown in silica ampoules and compared to experimental data. The results are useful for in situ control of the process and show the importance of a careful calculation of the meniscus shapes for the optimization of a stable dewetted Bridgman growth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
