Abstract
The results of experimental studies of the dependence of the memristor effect of bundles of vertically aligned carbon nanotubes on the pressing force magnitude and the switching voltage are presented. The improvement of the memristor effect is shown with increasing pressing force and switching voltage. The dependence of the surface potential on the deformation of nanotubes located along the bundle cross section is shown. The obtained results can be used in the development of promising nanopiezotronics devices.
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