Dependence of the Inverse Spin Hall Voltage in Py/Ta Microstrip Array on the Microstrip Width

Abstract

Since inverse spin Hall effect (ISHE) can transform microwave energy into direct current (DC) energy in ferromagnetic (FM)/nonmagnetic (NM) bilayer metal materials, the ISHE-based FM/NM microstrip arrays have clear potential to be used for microwave power transmission and harvesting. Driven by the need for the miniaturization of electronic devices, it is essential to study the dependence of the characteristics of FM/NM microstrip arrays on their geometries. In this work, we have experimentally demonstrated that the Py/Ta microstrip array’s ISHE signal increases linearly with an increase in the Py/Ta microstrip width and that the effective saturation magnetization of the Py film shows the same change tendency. Moreover, the anisotropy field of the Py film increases linearly as the width decreases. Our work provides a valuable reference for the future miniaturization of ISHE-based rectifier devices.