Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer

Abstract

Silicon carbide (SiC) power devices are expected to be useful in low-loss power conversion equipment in wide-ranging industrial areas. 4H-SiC Schottky barrier diodes (SBDs) and metal oxide semiconductor field-effect transistors (MOSFETs) have been launched on the commercial market, and many results obtaining outstanding performance of 4H-SiC switching devices have been reported [1-. Presently, SiC chip cost is a big problem preventing an increase in market penetration of such commercial devices. Therefore, 150 mm size wafers are urgently required reducing the cost per unit area for SiC epitaxial layers. Recently, some SiC wafer vendors announced that 150 mm SiC substrate would be released [4, and some groups have reported results of epitaxial growth on 150 mm SiC substrate [6-9].