Abstract
Dual-damascene Cu electromigration test structures with unpassivated segments in the second level of metallization were tested under vacuum. About 20 immobile voids formed along 1000-μm-long structures. Crystallographic orientations of grains on anode and cathode sides of 158 voids were obtained. It is shown that electromigration diffusivities vary with crystallographic orientations of the grains, increasing in the order (1 1 1), (1 1 5), (7 5 13), (11 1 11), and other orientations not twin related to (1 1 1). Data of this type provide an improved basis for process development for optimized reliability and for extrapolation of test results for reliability projections.
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