Abstract
Polysilicon layers acting as an absorption layer in a metal-semiconductor-metal (MSM) photodetector were post-annealed with various annealing processes to find the relationship between the morphology of polysilicon and the photo-response of the MSM photodetector. Among the processes, rapid thermal anneal (RTA) was a suitable post-annealing process because it supplied polysilicon layers having a smoother surface and a proper grain size for photon absorption. Therefore, MSM photodetectors that based on RTA-processed polysilicon showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and that are applicable to sensor systems.
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