Dependence of the criterial levels of damage in semiconductor structures under the action of high-power electromagnetic pulse on the pulse rise rate

Abstract

It is demonstrated that the criterial (critical) levels of thermal damage of the semiconductor structures with p-n junctions depend on both electromagnetic pulse energy and power and the pulse rise rate. The temperature of destruction of the junction that is found from the solution to the heat-conduction equation is chosen as the critical damage level. At a constant pulse power, the energy needed for the damage decreases with increasing pulse rise rate.