Abstract
The SiOC film was deposited through a dissociation and recombination of a mixed bistrimethylsilylmethane and oxygen precursor by using plasma energy. The mixed precursor consisted of organic bistrimethylsilylmethane and inorganic oxygen. The final chemical properties of the SiOC film were divided into three types, organic, hybrid, and inorganic types, because there is the hybrid type with no polarity between the alkyl group of CHn (n = 1, 2, 3, ···) sites and the hydrophilic group of OH sites. From the results obtained by peak indexing using X-ray photoelectron spectroscopy and Fourier Transform Infrared spectroscopy, the chemical properties of the hybrid and the inorganic types were similar. The current-voltage (I-V) measurements on a pentacene-channel field-eect transistor based on the SiOC film displayed good conductivity for the hybrid-type SiOC film, but the films of the other types showed poor conductivity because the leakage current increased with increasing polarization of groups, such as CH or OH groups.
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