Dependence of the annealing kinetics of A centers and divacancies on temperature, particle energy, and irradiation dose for n-Si crystals

Abstract

n-Si crystals grown by the float-zone method with a phosphorus concentration of ∼6×1013 cm−3 and irradiated with 2-MeV electrons and 25-MeV protons were studied. It is shown that the kinetics of the isochronous annealing of the A centers and divacancies (the annealing temperature and the rearrangement of radiation defects in the situation where the dissociation of one type of defects gives rise to more stable defects) depends in a complicated way on the energy, dose, and temperature of irradiation; i.e., this kinetics depends on the relation between the concentrations of various radiation defects and on the charge state of reacting primary radiation defects when they interact with each other, with impurity atoms, and with disordered regions. An increase in the concentration of divacancies in the temperature range of 180–210°C is attributed to the dissociation of disordered regions.