Dependence of the AlN-Layer growth rate on source-substrate clearance for the sublimation growth method

Abstract

The proposed study is devoted to investigating the growth conditions of AlN thick layers and bulk crystals in the sublimation sandwich method. For the first time, the dependences of the layer-growth rate on source-substrate clearance are experimentally obtained for this material at two nitrogen-pressure values in the reactor: 0.3 and 0.6 bar. The obtained results point to the fact that the basic mechanism of the transport of components of the source to the substrate is diffusion. The contribution of kinetic effects becomes appreciable at the smallest clearance of 0.3 mm, especially, at a lower nitrogen pressure of 0.3 bar.