DEPENDENCE OF THE ABSORPTION SPECTRA OF III–V SEMICONDUCTOR QUANTUM DOTS ON THE FUNDAMENTAL PARAMETERS

Abstract

The absorption spectra of semiconductor quantum dots (QDs) are expected to be a series of δ-function-like discrete lines due to the nature of the density of states. In a realistic III–V QD system, the absorption spectra is the superimposition of the contribution from each individual dot and the overall behavior is modeled by considering a Gaussian size distribution. In this paper, we study and present the dependence of the Gaussian nature of the absorption spectra of In X Ga 1-X N/GaN QD systems on the dot size distribution and some fundamental parameters such as bowing effect of the band gap, band offset ratio, and so on. It is observed that the absorption spectra depend strongly on the dot size distribution. The results presented helps to get a better insight of the optical properties of In X Ga 1-X N/GaN QD systems.