Abstract
Abstract Ge2Sb2Te5 is one of the prominent phase change memory material for non-volatile data storage due to high crystallization temperature and fast crystallization speed. The physical correlations have been employed to narrate the structural alteration of Ge2Sb2Te5 on Sm incorporation. The calculation of structural change has been performed by calculating the change in net constraints (Ncon) with mean coordination (Z) on Sm addition. There is an increase in fraction of zero frequency modes (Mf) and cross-linking density (DCL) on Sm incorporation. The structural cross-linking shows a three dimensional network formation. There is an enhancement in density and compactness on Sm addition. The degree of covalency (>93%) shows a decrease in ordering and leading to an increase in glass formation tendency. The calculated values of band gap show an increase on Sm addition which is in good agreement with increase in cohesive energy calculated using chemical bond approach (CBA). Using CBA, the glass transition temperature has been estimated and is correlated with the increase in cross-linking in the system.
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