Abstract
Voltages generated from inverse spin Hall and anisotropic magneto-resistance effects via spin pumping in ferromagnetic (F)/non-magnetic (N) bilayers are investigated by means of a broadband ferromagnetic resonance approach. Varying the non-magnetic layer thickness enables the determination of the spin diffusion length in Pd of 5.5 +/- 0.5 nm. We also observe a systematic change of the voltage lineshape when reversing the stacking order of the F/N bilayer, which is qualitatively consistent with expectations from spin Hall effects. However, even after independent calibration of the precession angle, systematic quantitative discrepancies in analyzing the data with spin Hall effects remain.
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